The RAPYULAS MP-T2030 laser microprocessing system comes equipped with functions that automate and improve on the basic performance of its predecessor, the immensely popular RAPYULAS MP-T1030 model (greater long-term stability, increased processing speed, etc.). Taking advantage of our original processing method “LMA”(*1) , the MP-T2030 realized high quality and speedy scribing of brittle materials like a sapphire substrate. Also the compact design of the MP-T2030 model is perfectly suited for mass production processes, and standard processing operations are made simpler and easier without the need for any professional skills or specialized experience.

Labor-savings and high throughput have been achieved through automation. Based on the MP-T1030 model, the RAPYULAS MP-T2030 is equipped with the following functions:   ・PCompatible with multiple cassette use   ・PAutomatic wafer transport   ・PAuto Focus function   ・PAuto Alignment function   ・PSpace requirements minimized   ・PLaser Safety     (The MP-T2030 Machine corresponds with class 1 laser product)

Standard Specification

Light Source	DPSS Laser	Power Supply	AC200V±10% 5kVA
Control	Windows 2000	Vacuum Air	-80kPa 40little/min.
Type of Cassette	Custom Design	High Pressure Air	0.4Mpa 20little/min.
Number of Cassette	Max. of 3 cassettes	Dimensions	1300x900x1850mm
Size of Wafer	Max. 6"	Weight	Approx. 1000kg

LMA(Laser Melting Alteration: Patent pending) is a scribing method of making alterative area, not elimination of material. This LMA method can be applied in high efficiency and quality dicing process without scatter of particles on wafer surface. Details see document
	LMA	Ablation
	Processing section view

Comparison between LMA and Ablation

	LMA	Ablation
Condition of kerf	Melting, solidification	Elimination, scatter
Scatter of particles on wafer surface	Nothing	Many scatter
Processing efficiency	High speed, high aspect ratio	There are limits in speed and depth
Cleaving stability	Good	Not good
Light permeability	High	Low